An analytical approach for physical modeling of hot-carrier induced degradation
نویسندگان
چکیده
a Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Vienna, Austria A.F.Ioffe Physical–Technical Institute, 26 Polytechnicheskaya Str., 194021 St.-Petersburg, Russia Christian Doppler Laboratory for Reliability Issues in Microelectronics at IUE, TU Wien, Gußhausstraße 27-29, A-1040 Vienna, Austria Austriamicrosystems AG, Unterpremstätten, Austria e Institute für Theoretische Elektrotechnik, RWTH Aachen, Germany
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 51 شماره
صفحات -
تاریخ انتشار 2011